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| Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 -0.3 s Features q q q q 0.650.15 1.5 -0.05 +0.25 0.650.15 +0.2 1.1 -0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 100 100 15 50 20 200 150 -55 ~ +150 Unit V V V mA mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : 1V s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT Conditions VCB = 60V, IE = 0 VCE = 60V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = -2mA, f = 200MHz 100 100 15 400 0.05 100 1200 0.2 V MHz min typ max 100 1 Unit nA A V V V *1h FE1 Rank classification Rank hFE R 400 ~ 800 1VR S 600 ~ 1200 1VS Marking Symbol 0 to 0.1 s Absolute Maximum Ratings (Ta=25C) 0.1 to 0.3 0.40.2 0.8 0.16 -0.06 +0.1 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 -0.05 1 1.90.2 +0.2 0.95 3 0.4 -0.05 +0.1 2 1.45 1 Transistor PC -- Ta 240 80 Ta=25C 70 200 50 25C Ta=75C 40 -25C 2SD1149 IC -- VCE 60 VCE=10V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 60 50 40 160 IB=100A 80A 60A 50A 40A 30A 120 Collector current IC (mA) 30 30 20A 20 10A 10 80 20 40 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 Ta=75C IC/IB=10 1800 hFE -- IC 200 VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 1500 Ta=75C 25C Transition frequency fT (MHz) 30 100 160 1200 120 900 -25C 80 600 300 40 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 6 NV -- IC IE=0 f=1MHz Ta=25C 100 VCE=10V GV=80dB Function=FLAT Ta=25C Rg=100k 60 22k 40 5k 100 NV -- VCE Collector output capacitance Cob (pF) Rg=100k 5 Noise voltage NV (mV) 4 Noise voltage NV (mV) 80 80 60 22k 3 40 2 5k 1 20 20 0 1 3 10 30 100 0 0.01 0 0.03 0.1 0.3 1 1 3 10 IC=1mA GV=80dB Function=FLAT Ta=25C 30 100 Collector to base voltage VCB (V) Collector current IC (mA) Collector to emitter voltage VCE (V) 2 |
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